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| PF5103 N-Channel Switch October 2006 PF5103 N-Channel Switch Features * This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. * Sourced from process 51. tm TO-92 1 23 Marking : PF5103 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * Symbol VDG VGS IGF TJ, TSTG Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Ta = 25C unless otherwise noted Parameter Value 40 -40 50 -55 ~ 150 Units V V mA C Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* Symbol PD RJC RJA * Minimum land pad. Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Value 625 5.0 125 357 Units mW mW/C C/W C/W Electrical Characteristics Symbol Off Characteristics V(BR)GSS IGSS VGS(off) VGS(f) IDSS TC = 25C unless otherwise noted Parameter Test Condition MIN MAX Units Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage Gate-Source Forward Voltage IG = -1.0A, VDS = 0 VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, Ta = 125oC VDS = 15V, ID = 1.0nA VDS = 0V, IG = 10mA VDS = 15V, VGS = 0 VDG = 15V, ID = 500uA, f = 1.0KHz VDG = 15V, ID = 2.0mA, f = 1.0KHz VDG = 15V, ID = 500uA, f = 1.0KHz VDG = 15V, VGS = 0V, f = 1.0MHz VDG = 15V, VGS = 0V, f = 1.0MHz -40 -200 -500 -1.2 -2.7 1.0 V pA nA V V On Characteristics Zero-Gate Voltage Drain Current * 10 40 mA mhos mhos 25 16 6 mhos pF pF Small Signal Characteristics gfs goss Ciss Crss Forward Transfer conductance Output Conductance Input Capacitance Reverse Transfer Capacitance 3500 7500 * Pulse Test: Pulse Width 300s, Duty Cycle 2.0% (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com PF5103 Rev. A PF5103 N-Channel Switch Typical Characteristics Common Drain-Source 10 - DRAIN CURRENT (mA) V GS = 0 V - 0.2 V Parameter Interactions r - TRANSCONDUCTANCE (mmhos) T A = 25C TYP V GS(off) = - 2.0 V 100 r DS 100 DS - DRAIN "ON" RESISTANCE () 8 - 0.4 V 50 50 6 - 0.6 V 20 g fs I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ 1.0 mA, V GS = 0 V GS(off) @ V DS = 15V, I D = 1.0 nA _ 20 4 - 0.8 V D 2 - 1.4 V - 1.0 V - 1.2 V 10 I DSS 10 I fs 0 0 0.4 0.8 1.2 1.6 VDS - DRAIN-SOURCE VOLTAGE (V) 2 5 _ 0.5 _ _ _ 1 2 5 V GS (OFF) - GATE CUTOFF VOLTAGE (V) 5 10 Transfer Characteristics 40 - DRAIN CURRENT (mA) VGS(off) = - 3.0 V - 55C g Transfer Characteristics 16 - DRAIN CURRENT (mA) VGS(off) = - 1.6 V - 55C 25C 125C V DS = 15 V 30 25C 125C VGS(off) = - 2.0 V 12 20 125C 25C - 55C 8 VGS(off) = - 1.1 V 125C 25C - 55C 10 V DS = 15 V 4 D I 0 I D 0 -1 -2 -3 VGS - GATE-SOURCE VOLTAGE (V) 0 0 -0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V) Transfer Characteristics g fs - TRANSCONDUCTANCE (mmhos) Transfer Characteristics - TRANSCONDUCTANCE (mmhos) 30 VGS(off) = - 3.0 V - 55C 25C 125C 30 V GS(off) = - 1.6 V - 55C 20 VGS(off) = - 2.0 V - 55C 25C 125C 20 25C 125C VGS(off) = - 1.1 V 10 10 - 55C 25C 125C V DS = 15 V V DS = 15 V 0 -1 -2 VGS - GATE-SOURCE VOLTAGE (V) -3 g 0 fs 0 0 -0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V) 2 PF5103 Rev. A www.fairchildsemi.com PF5103 N-Channel Switch Typical Characteristics(continued) Transconductance vs Drain Current 100 TA = 25C V DG = 15V f = 1.0 kHz g fs - TRANSCONDUCTANCE (mmhos) - OUTPUT CONDUCTANCE ( mhos) Output Conductance vs Drain Current 100 T A = 25C f = 1.0 kHz V DG = 5.0V 10V 15V 20V 20V 5.0V 5.0V 10V 15V 10V 15V 20V 10 V GS(off) = - 5.0V 10 V GS(off) = - 1.4V V GS(off) = - 3.0V 1 V GS(off) = - 0.85V V GS(off) = - 2.0V 1 0.1 1 I D - DRAIN CURRENT (mA) 10 Capacitance vs Voltage 100 g os 0.1 0.01 0.1 I D - DRAIN CURRENT (mA) 10 Noise Voltage vs Frequency 100 e n - NOISE VOLTAGE (nV / Hz) C is (C rs ) - CAPACITANCE (pF) V DG = 15V = 0.21 @ f 1.0 kHz 50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz f = 0.1 - 1.0 MHz 10 10 5 I D = 10 mA I D = 1.0 mA C is (V DS = 0) C is (V DS = 20) C rs (V DS = 0) 1 0 -4 -8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V) -20 1 0.01 1 10 f - FREQUENCY (kHz) 100 Noise Voltage vs Current 100 e n - NOISE VOLTAGE (nV / Hz) V DG = 15V 800 Power Dissipation vs Power Dissipation vs Ambient Temperature Ambient Temperature Pd, Power Dissipation,[mW] f = 10 Hz f = 100 Hz f = 1.0 kHz P D - POWER DISSIPATION (mW) 700 600 600 500 TO-92 SOT-23 10 400 400 300 200 100 0 0 0 0 25 200 f = 10 kHz f = 100 kHz 1 0.01 I D 0.1 1 - DRAIN CURRENT (mA) 10 25 50 Temperature, T C [( o C) TEMPERATURE C] 50 75 75 100 100 o 125 125 150 150 175 3 PF5103 Rev. A www.fairchildsemi.com PF5103 N-Channel Switch Typical Characteristics(continued) Switching Turn-On Time vs Gate-Source Voltage 25 20 15 10 5 0 t r (ON) Switching Turn-Off Time vs Drain Current t d(OFF) ,t OFF - TURN-OFF TIME (ns) 100 80 VGS(off)= -2.2V - 4.0V t (off) T A = 25C V DD = 3.0V V GS = -12V t d(off) DEVICE V GS(off) INDEPENDENT t r(ON) ,t d(ON)- TURN-ON TIME (ns) V DD = 3.0V t r APPROX. I D INDEPENDENT VGS(off) = 3.0V T A = 25C I D = 6.6 mA 2.5 mA - 6.0V t d (ON) V GS = -12V 60 - 7.5V 40 20 0 t d(off) 0 V GS(off) -2 -4 -6 -8 -10 - GATE-SOURCE CUTOFF VOLTAGE (V) 0 2 4 6 8 I D - DRAIN CURRENT (mA) 10 100 125C V GS(off) TYP = - 2.0V r DS - NORMALIZED RESISTANCE ( ) r DS - DRAIN "ON" RESISTANCE () On Resistance vs Drain Current Normalized Drain Resistance vs Bias Voltage 100 50 20 10 5 2 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) 1 V GS(off) @ 5.0V, 10 A 50 25C 125C - 55C V GS(off) TYP = - 7.0V r DS r DS = V GS ________ 1V GS(off) 20 25C r DS @ V GS = 0 - 55C 10 1 2 ID 5 10 20 - DRAIN CURRENT (mA) 50 100 4 PF5103 Rev. A www.fairchildsemi.com PF5103 N-Channel Switch Package Dimensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters 5 PF5103 Rev. A www.fairchildsemi.com PF5103 N-Channel Switch PF5103 N-Channel Switch TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 6 PF5103 Rev. A www.fairchildsemi.com |
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